Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Apr 1, 2025
Grant Date -
Mar 28, 2024
app pub date -
Dec 4, 2023
filing date -
Dec 4, 2023
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully