Variable resistance memory device
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United States of America
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Apr 1, 2025
Grant Date -
Apr 6, 2023
app pub date -
May 17, 2022
filing date -
May 17, 2022
priority date (Note) -
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Abstract
A variable resistance memory device including a stack including insulating sheets and conductive sheets, which are alternatingly stacked on a substrate, the stack including a vertical hole vertically penetrating therethrough, a bit line on the stack, a conductive pattern electrically connected to the bit line and vertically extending in the vertical hole, and a resistance varying layer between the conductive pattern and an inner side surface of the stack defining the vertical hole may be provided. The resistance varying layer may include a first carbon nanotube electrically connected to the conductive sheets, and a second carbon nanotube electrically connected to the conductive pattern.
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