Microelectronic devices comprising stack structures having pillars and elliptical conductive contacts

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12267997
APP PUB NO 20240147713A1
SERIAL NO

18394273

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Abstract

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A method of forming a microelectronic device including a first stack structure comprising alternating levels of insulative structures and other insulative structures, forming strings of memory cells through the first stack structure, forming a second stack structure over the first stack structure, based at least partially on observed amount of pillar bending within the first stack structure, forming a first tailored reticle specific to the observed amount of pillar bending, utilizing the first tailored reticle to form openings extending through the second stack structure and over some of the strings of memory cells, wherein centers of the openings over the strings of memory cells are at least substantially aligned with the centers of uppermost surfaces of the strings of memory cells in a direction of the observed pillar bending, and forming upper pillars extending through the second stack structure and over some of the strings of memory cells.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gupta, Sidhartha Boise, US 27 13
Jain, Harsh Narendrakumar Boise, US 36 30
Thong, Kar Wui Boise, US 12 5
Xu, Lifang Boise, US 105 294

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