Memory device having capacitor structure and method of forming the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12267992
APP PUB NO 20230132910A1
SERIAL NO

17583227

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Abstract

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A memory device having a capacitor structure and a method of forming the same are provided. The memory device includes a substrate; a dielectric layer disposed on the substrate; and a plurality of capacitor structures respectively disposed in the dielectric layer. Each capacitor structure includes: a cup-shaped lower electrode; a first upper electrode conformally covering an outer surface of the cup-shaped lower electrode; a first capacitor dielectric layer disposed between the outer surface of the cup-shaped lower electrode and the first upper electrode; a second upper electrode conformally covering an inner surface of the cup-shaped lower electrode, wherein the second upper electrode is electrically connected to the first upper electrode by at least one connection via; and a second capacitor dielectric layer disposed between the inner surface of the cup-shaped lower electrode and the second upper electrode.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Katherine H New Taipei, TW 143 70
Kao, Yun-Feng New Taipei, TW 37 5

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