Nitride semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266730
APP PUB NO 20220344518A1
SERIAL NO

17763536

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Abstract

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A nitride semiconductor device includes: a substrate; a nitride semiconductor layer above the substrate; a high-resistance layer above the nitride semiconductor layer; a p-type nitride semiconductor layer above the high-resistance layer; a first opening penetrating through the p-type nitride semiconductor layer and the high-resistance layer to the nitride semiconductor layer; an electron transport layer and an electron supply layer covering an upper portion of the p-type nitride semiconductor layer and the first opening; a gate electrode above the electron supply layer; a source electrode in contact with the electron supply layer; a second opening penetrating through the electron supply layer and the electron transport layer to the p-type nitride semiconductor layer; a potential fixing electrode in contact with the p-type nitride semiconductor layer at a bottom part of the second opening; and a drain electrode.

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Patent Owner(s)

Patent OwnerAddress
PANASONIC HOLDINGS CORPORATION1006 OAZA KADOMA KADOMA-SHI OSAKA 571-8501

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shibata, Daisuke Kyoto, JP 164 974
Tamura, Satoshi Osaka, JP 111 732
Tsurumi, Naohiro Kyoto, JP 19 308

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