Field effect transistor with multiple stepped field plate

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266721
APP PUB NO 20220302291A1
SERIAL NO

17834013

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Importance

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Abstract

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A transistor device according to some embodiments includes a semiconductor barrier layer, a surface dielectric layer on the semiconductor barrier layer, and a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein that is laterally spaced apart from the gate. The device includes an interlayer dielectric layer on the surface dielectric layer that extends over the gate and into the aperture in the surface dielectric layer, and a multiple-stepped field plate on the interlayer dielectric layer. The multiple-stepped field plate is laterally spaced apart from the gate. A recessed portion of the multiple-stepped field plate is above the aperture in the surface dielectric layer, and the multiple-stepped field plate includes a first step adjacent the recessed portion of the field plate on a side of the field plate opposite the gate, and a second step adjacent the first step.

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Patent Owner(s)

Patent OwnerAddress
WOLFSPEED INC4600 SILICON DRIVE DURHAM NC 27703

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bothe, Kyle Cary, US 45 54
Guo, Jia New Hill, US 89 618
Sheppard, Scott Chapel Hill, US 91 1742

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