Method of making semiconductor device having self-aligned interconnect structure

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266594
APP PUB NO 20240096756A1
SERIAL NO

18517298

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Abstract

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A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Shang-Wen Hsinchu, TW 94 213
Chen, Chih-Liang Hsinchu, TW 301 1501
Ciou, Shang-Syuan Hsinchu, TW 9 3
Lai, Chih-Yu Hsinchu, TW 60 304
Lu, Chi-Yu Hsinchu, TW 113 185
Tsai, Ching-Wei Hsinchu, TW 323 3185
Zhuang, Hui-Zhong Hsinchu, TW 306 953

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