Transistor isolation regions and methods of forming the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266573
APP PUB NO 20230008893A1
SERIAL NO

17483043

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Abstract

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In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Yiting Taoyuan, TW 5 1
Ho, Yi Chen Taiching, TW 17 2
Lin, Chi-Hsun Hsinchu, TW 10 0
Pan, Zheng-Yang Zhubei, TW 45 130

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