Method of forming a barrier layer in an interconnect structure of semiconductor device
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United States of America
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Apr 1, 2025
Grant Date -
Aug 11, 2022
app pub date -
Apr 27, 2022
filing date -
Apr 27, 2022
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Abstract
Implementations of the present disclosure provide methods for preventing contact damage or oxidation after via/trench opening formation. In one example, the method includes forming an opening in a structure on the substrate to expose a portion of a surface of an electrically conductive feature, and bombarding a surface of a mask layer of the structure using energy species formed from a plasma to release reactive species from the mask layer, wherein the released reactive species form a barrier layer on the exposed surface of the electrically conductive feature.
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