Semiconductor device and method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266541
APP PUB NO 20220262649A1
SERIAL NO

17350206

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Abstract

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In an embodiment, a method includes: forming a photoresist over a target layer; performing a plasma-enhanced deposition process, the plasma-enhanced deposition process etching sidewalls of the photoresist while depositing a spacer layer on the sidewalls of the photoresist; patterning the spacer layer to form spacers on the sidewalls of the photoresist; and etching the target layer using the spacers and the photoresist as a combined etching mask.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Sung-En Hsinchu, TW 48 24
Wang, Chunyao Zhubei, TW 46 64

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