Method of manufacturing semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266539
APP PUB NO 20230369062A1
SERIAL NO

18225623

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Importance

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Abstract

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In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsieh, Ken-Hsien Hsinchu, TW 113 1847
Lai, Chih-Ming Hsinchu, TW 485 10832
Lin, Chin-Hsiang Hsinchu, TW 424 6439
Lin, Wei-Liang Hsinchu, TW 90 522
Liu, Ru-Gun Hsinchu, TW 404 6961
Yen, Yung-Sung Hsinchu, TW 87 446

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