Method for manufacturing semiconductor device using etchant composition having high etching selectivity

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United States of America

PATENT NO 12266538
APP PUB NO 20230260797A1
SERIAL NO

17674158

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Abstract

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A method for manufacturing a semiconductor device includes:

    forming a feature in a dielectric layer disposed on a semiconductor substrate, the dielectric layer including silicon oxide, the feature extending downwardly from a top surface of the dielectric layer and including silicon, a nitride compound, a low-k dielectric material other than silicon oxide, or combinations thereof; andselectively etching the dielectric layer using an etchant composition to form a trench extending downwardly from the top surface of the dielectric layer, the etchant composition including a hydrogen halide and a nitrogen-containing compound represented by Formula (A),

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jao, Meng-Huan Hsinchu, TW 13 2
Kuang, Chia-Chien Hsinchu, TW 3 0
Lee, Fang-Wei Hsinchu, TW 40 50
Su, Huan-Chieh Hsinchu, TW 209 239

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