Sacrificial capping layer for contact etch

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12266533
APP PUB NO 20220384199A1
SERIAL NO

17721620

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Abstract

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A method which includes providing a substrate having a source/drain region and an etch stop layer on the source/drain region. A plasma etching process is performed using an etching gas that removes the etch stop layer and forms a sacrificial oxide capping layer on the source/drain region. The sacrificial oxide capping layer is then from the source/drain region.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Biolsi, Peter New Windsor, US 9 22
Han, Yun Albany, US 53 102
Metz, Andrew Albany, US 34 54

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