Method of manufacturing silicon carbide semiconductor device
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United States of America
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Apr 1, 2025
Grant Date -
Oct 20, 2022
app pub date -
Feb 1, 2022
filing date -
Feb 1, 2022
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Abstract
A method for manufacturing a silicon carbide semiconductor device according to the technology disclosed in the present specification includes: forming a drift layer on an upper surface of a silicon carbide semiconductor substrate; forming a hard mask on the upper surface of the drift layer by anisotropic etching; and forming a first ion-implanted region in a surface layer of the drift layer by implanting ions into the drift layer in a state in which the hard mask is formed, in which the hard mask includes a sidewall perpendicular to the upper surface of the drift layer.
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