Directed self-assembly enabled patterning over metal layers using assisting features
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United States of America
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Apr 1, 2025
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app pub date -
Dec 22, 2021
filing date -
Dec 22, 2021
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Abstract
Described herein are IC devices include patterned conductive layers, such as metal gratings and gate layers, and patterned layers formed over the patterned conductive layers using a directed self-assembly (DSA)-enabled process with DSA assisting features. A patterned conductive layer may have non-uniform features, such as large regions of insulator within a metal grating, or varying gate lengths across a gate layer. The DSA assisting features enable the formation of patterned layers, e.g., layers with different hard mask materials replicating the structure of the conductive layer below, even over non-uniform features.
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