Formation of single crystal semiconductors using planar vapor liquid solid epitaxy

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United States of America

PATENT NO 12266526
APP PUB NO 20240030027A1
SERIAL NO

18480378

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Abstract

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A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Holland, Martin Christopher Hsinchu, TW 80 1005

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