Photomask pellicle including network of nanowires and method of forming the same

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United States of America

PATENT NO 12266525
APP PUB NO 20240177994A1
SERIAL NO

18426387

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Abstract

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A first capping layer is deposited over a substrate. A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to expose the first capping layer. The first capping layer and the second capping layer are thinned around the nanowires to form a coating on the nanowires.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Yun-Yue Hsinchu, TW 77 363
Yu, Chen-Chieh Hsinchu, TW 5 11

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