Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
Number of patents in Portfolio can not be more than 2000
United States of America
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Apr 1, 2025
Grant Date -
May 9, 2024
app pub date -
Jan 19, 2024
filing date -
Jan 19, 2024
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Abstract
Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.
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