Oxide-nitride-oxide stack having multiple oxynitride layers

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United States of America

PATENT NO 12266521
APP PUB NO 20230017648A1
SERIAL NO

17945793

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Abstract

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A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-layer charge storing layer and methods of forming the same are provided. Generally, the method involves: (i) forming a first oxide layer of the ONO structure; (ii) forming a multi-layer charge storing layer comprising nitride on a surface of the first oxide layer; and (iii) forming a second oxide layer of the ONO structure on a surface of the multi-layer charge storing layer. Preferably, the charge storing layer comprises at least two silicon oxynitride layers having differing stoichiometric compositions of Oxygen, Nitrogen and/or Silicon. More preferably, the ONO structure is part of a silicon-oxide-nitride-oxide-silicon (SONOS) structure and the semiconductor device is a SONOS memory transistor. Other embodiments are also disclosed.

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Patent Owner(s)

Patent OwnerAddress
LONGITUDE FLASH MEMORY SOLUTIONS LTDBRACKEN ROAD SANDYFORD FIRST FLOOR BLACKTHORN EXCHANGE DUBLIN D18 P3Y9

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Geha, Sam G Cupertino, US 14 140
Jenne, Fredrick Mountain House, US 29 519
Levy, Sagy Charel Zichron Yaakov, IL 35 248
Ramkumar, Krishnaswamy San Jose, US 191 3141

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