Method for manufacturing epitaxial wafer, silicon-based substrate for epitaxial growth, and epitaxial wafer
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United States of America
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Apr 1, 2025
Grant Date -
Nov 18, 2021
app pub date -
Sep 6, 2019
filing date -
Sep 6, 2019
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Abstract
A method for manufacturing an epitaxial wafer including the steps of: preparing a silicon-based substrate having a chamfered portion in a peripheral portion; forming an annular trench in the chamfered portion of the silicon-based substrate along an internal periphery of the chamfered portion; and performing an epitaxial growth on the silicon-based substrate having the trench formed. This provides a method for manufacturing an epitaxial wafer by which a crack generated in a peripheral chamfered portion can be suppressed from extending towards the center.
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