Method of manufacturing a semiconductor device

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United States of America

PATENT NO 12265332
APP PUB NO 20230004087A1
SERIAL NO

17491743

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Abstract

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A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ya Hui Hsinchu, TW 54 176
Chen, Minfeng Hsinchu, TW 18 12
Lai, Yu-Tse Zhubei, TW 12 0

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