Complementary metal-oxide-semiconductor (CMOS) multi-well apparatus for electrical cell assessment

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United States of America

PATENT NO 12265076
APP PUB NO 20230184739A1
SERIAL NO

17891964

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Abstract

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Disclosed herein are semiconductor devices to provide a CMOS-compatible, wafer-scale, multi-well platform that can be used for biomedical or other applications, and methods to operate the same. In some embodiments, circuitry is provided underneath a multiple-well array to electrically interface with electrodes in the wells. To interface with electrodes in a large array, circuitry may be fabricated on a single silicon (Si) wafer having a dimension that is at least the same or larger than that of the multiple-well array. According to one aspect of the present disclosure, standard CMOS fabrication process such as those known to be used in a standard semiconductor foundry may be used without expensive customization for complex fabrication procedures. This may help the production cost to be lowered in some cases.

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Patent Owner(s)

Patent OwnerAddress
PRESIDENT AND FELLOWS OF HARVARD COLLEGE17 QUINCY STREET CAMBRIDGE MA 02138

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abbott, Jeffrey T Cambridge, US 11 37
Ham, Donhee Cambridge, US 34 453
Hinton, Henry Julian Cambridge, US 5 1
Park, Hongkun Cambridge, US 56 1972
Wu, Wenxuan Cambridge, US 13 34

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