Magnetoresistive random access memory and method for fabricating the same

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United States of America

PATENT NO 12262646
APP PUB NO 20240130246A1
SERIAL NO

18395646

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Abstract

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A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hung-Yueh Hsinchu, TW 74 251
Fan, Ju-Chun Tainan, TW 14 7
Hsu, Ching-Hua Kaohsiung, TW 31 22
Hsu, Po-Kai Tainan, TW 67 58
Lin, Yi-Yu Taichung, TW 32 31
Wang, Hui-Lin Taipei, TW 132 187

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