Semiconductor device and method of fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12262555
APP PUB NO 20230326997A1
SERIAL NO

17746964

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Abstract

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A semiconductor device includes a substrate, a plurality of planar transistors, a fin-type field effect transistor and a first nonactive structure. The substrate includes a first region and a second region. The first region includes a plurality of first planar active regions and a nonactive region. The nonactive region is located between or aside the plurality of first planar active regions and includes a second planar active region. The second region has a fin active region. The plurality of planar transistors are located in the plurality of first planar active regions within the first region. The fin-type field effect transistor is located on the fin active region within the second region. The first nonactive structure is located in the nonactive region between the plurality of planar transistors.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yu-Ruei New Taipei, TW 32 27
Lin, Jia-He New Taipei, TW 5 4
Lin, Yu-Hsiang New Taipei, TW 161 478

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