Semiconductor structure and manufacturing method thereof

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United States of America

PATENT NO 12262550
SERIAL NO

18979543

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Abstract

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A method of manufacturing a semiconductor structure is provided. A substrate including a first silicon carbide layer and a second silicon carbide layer under the first silicon carbide layer is formed. The substrate includes a unit region and a termination region surrounding the unit region. A first guard ring structure is formed in the termination region and the first silicon carbide layer, adjoining a top surface of the first silicon carbide layer. A second guard ring structure is formed in the termination region and the second silicon carbide layer. Second guard ring well regions of the second guard ring structure correspond one-on-one to first guard ring well regions of the first guard ring structure. Each of the second guard ring well regions overlaps with a corresponding one of the first guard ring well regions in a vertical direction perpendicular to the top surface of the substrate.

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Patent Owner(s)

  • DIODES, INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Chiao-Shun New Taipei, TW 39 149
Li, Jie New Taipei, TW 741 3601
Tsai, Ming-Wei New Taipei, TW 42 335
Wang, Ching-Wen New Taipei, TW 58 180

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