Transistor device having a comb-shaped channel region to increase the effective gate width

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United States of America

PATENT NO 12262549
APP PUB NO 20210384320A1
SERIAL NO

17411697

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Abstract

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A method of forming a comb-shaped transistor device is provided. The method includes forming a stack of alternating sacrificial spacer segments and channel segments on a substrate. The method further includes forming channel sidewalls on opposite sides of the stack of alternating sacrificial spacer segments and channel segments, and dividing the stack of alternating sacrificial spacer segments and channel segments into alternating sacrificial spacer slabs and channel slabs, wherein the channel slabs and channel sidewalls form a pair of comb-like structures. The method further includes trimming the sacrificial spacer slabs and channel slabs to form a nanosheet column of sacrificial plates and channel plates, and forming source/drains on opposite sides of the sacrificial plates and channel plates.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3099 32749

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