Ferroelectric memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12262542
APP PUB NO 20230371274A1
SERIAL NO

18357153

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Abstract

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A ferroelectric memory device includes a first conductive region, a second conductive region and a ferroelectric structure. The second conductive region is disposed over the first conductive region. The ferroelectric structure includes a plurality of different ferroelectric materials stacked between the first conductive region and the second conductive region.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chia, Han-Jong Hsinchu, TW 195 460

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