Semiconductor device and a data storage system including the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12262535
APP PUB NO 20220254807A1
SERIAL NO

17507929

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Abstract

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A semiconductor device including: a memory cell array region and a staircase region on a pattern structure; a stack structure including insulating layers and gate layers with gate pads alternately stacked in a vertical direction; a separation structure penetrating through the stack structure and contacting the pattern structure; a memory vertical structure penetrating through the stack structure and contacting the pattern structure; a support vertical structure penetrating through the stack structure and contacting the pattern structure; gate contact plugs disposed on the gate pads; and a peripheral contact plug spaced apart from the gate layers, wherein an upper surface of the memory vertical structure is at a first level, an upper surface of the peripheral contact plug is at a second level, an upper surface of the separation structure is at a third level, and upper surfaces of the gate contact plugs are at a fourth level.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO KOREA SUWON SUWON GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Wonseok Suwon-si, KR 80 2436
Kim, Jongsoo Seoul, KR 71 244
Lim, Juyoung Seoul, KR 12 25
Shim, Sunil Seoul, KR 83 3402

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