Semiconductor structure preparation method, semiconductor structure and semiconductor memory
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United States of America
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Mar 25, 2025
Grant Date -
Feb 2, 2023
app pub date -
Feb 10, 2022
filing date -
Feb 10, 2022
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Abstract
Provided are a method for preparing a semiconductor structure, a semiconductor structure and a semiconductor memory. The method includes the following operations. An initial semiconductor structure is formed on a substrate. The initial semiconductor structure is etched to form an array area structure and a peripheral area structure including a peripheral area gate structure. An isolation wall surrounding the peripheral area gate structure is formed on the substrate where the peripheral area structure locates. A second dielectric layer is deposited on the peripheral area gate structure including the isolation wall and on the array area structure. The second dielectric layer, the first dielectric layer and the isolation wall are etched to form the semiconductor structure with a flat surface.
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