Thin film transistor, display substrate and display device with reduced leakage current

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261227
APP PUB NO 20220406945A1
SERIAL NO

17772785

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Abstract

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The present disclosure provides a thin film transistor, a display substrate and a display device, and belongs to the field of display technology. The thin film transistor of the present disclosure includes: a base, and a gate, an active layer, a source and a drain located on the base, where the gate includes a first gate and a second gate which are sequentially provided on the base and are electrically connected to each other; the active layer is located between the first gate and the second gate, and orthographic projections of the first gate and the second gate on the base are partially overlapped with an orthographic projection of the active layer on the base, and the orthographic projections of the first gate and the second gate on the base are partially overlapped with each other.

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Patent Owner(s)

Patent OwnerAddress
BOE TECHNOLOGY GROUP CO LTD中国北京市朝阳区酒仙桥路10号 BEIJING 100015 100015
ORDOS YUANSHENG OPTOELECTRONICS CO LTDORDOS EQUIPMENT MANUFACTURING BASE DONGSHENG DISTRICT ORDOS INNER MONGOLIA 017020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Yezhou Beijing, CN 45 44
Gao, Yun Beijing, CN 104 1530
Hou, Lin Beijing, CN 33 80
Li, Feng Beijing, CN 810 5206
Li, Kai Beijing, CN 391 5044
Peng, Yanzhao Beijing, CN 3 9
Wang, Chenglong Beijing, CN 35 55
Yan, Lei Beijing, CN 74 214
Yang, Hua Beijing, CN 263 2514
Yao, Lei Beijing, CN 86 1896
Ye, Teng Beijing, CN 7 6
Zhu, Xiaogang Beijing, CN 29 198

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