Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261217
APP PUB NO 20240282850A1
SERIAL NO

18649713

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Importance

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Abstract

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A semiconductor device, including: a drift layer of a first conductivity type provided in a semiconductor base; a base layer of a second conductivity type provided in the semiconductor base at a front surface side thereof; a plurality of first trenches provided in the semiconductor base at a front surface side thereof, and having a plurality of first portions extending in a first direction to form a striped pattern; a second trench provided in the semiconductor base at a front surface side thereof, and having a plurality of second portions extending parallel to the first portions; a plurality of gate electrodes respectively provided in the first trenches; and a diode electrode provided in the second trench. The diode electrode includes: a plurality of inner electrodes provided in the second portions, and an outer electrode connecting the inner electrodes and surrounding ends of the first portions in a plan view.

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Patent Owner(s)

Patent OwnerAddress
FUJI ELECTRIC CO LTDKAWASAKI COUNTY OF KANAGAWA CITY JAPAN KAWASAKI-SHI KANAGAWA

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baba, Masakazu Matsumoto, JP 40 406
Harada, Shinsuke Tsukuba, JP 106 563

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