Fin-end gate structures and method forming same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261213
APP PUB NO 20220359722A1
SERIAL NO

17814779

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Abstract

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A method includes simultaneously forming a first dummy gate stack and a second dummy gate stack on a first portion and a second portion of a protruding fin, simultaneously removing a first gate electrode of the first dummy gate stack and a second gate electrode of the second dummy gate stack to form a first trench and a second trench, respectively, forming an etching mask, wherein the etching mask fills the first trench and the second trench, patterning the etching mask to remove the etching mask from the first trench, removing a first dummy gate dielectric of the first dummy gate stack, with the etching mask protecting a second dummy gate dielectric of the second dummy gate stack from being removed, and forming a first replacement gate stack and a second replacement gate stack in the first trench and the second trench, respectively.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chen-Ping Toucheng Township, TW 59 115
Kao, Kuei-Yu Hsinchu, TW 66 42
Lin, Chih-Han Hsinchu, TW 455 2260
Lin, Shih-Yao New Taipei, TW 254 639

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