Semiconductor device structure with gate stack and method for forming the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261203
APP PUB NO 20230122339A1
SERIAL NO

17578559

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDTAIWAN 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shih-Chiang Taichung, TW 14 681
Lin, Chien-Chih Taichung, TW 81 298
Lin, Shih-Hao Hsinchu, TW 167 179
Pan, Yun-Ju Taipei, TW 4 3
Wu, Chung-Shu Taoyuan, TW 15 40
Yan, Jhih-Yang Hsinchu County, TW 10 53
Yang, Szu-Chi Hsinchu, TW 18 15
Yu, Te-An Taipei, TW 3 0

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