Semiconductor device and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261198
APP PUB NO 20240145527A1
SERIAL NO

18406385

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Abstract

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A method for fabricating a semiconductor device includes: forming a mold structure including a mold layer and a supporter layer over a semiconductor substrate; forming an opening penetrating the mold structure; forming a protective layer on a bottom surface and a sidewall of the opening; forming a lower electrode over the protective layer; selectively etching the supporter layer to form a supporter that supports the lower electrode; removing the mold layer to define a non-exposed portion and an exposed portion of an outer wall of the protective layer; and selectively trimming the exposed portion of the protective layer to form a protective layer pattern between the supporter and the lower electrode.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INC2091 GYEONGCHUNG-DAERO BUBAL-EUB ICHEON-SI GYEONGGI-DO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Myoung Sik Gyeonggi-do, KR 4 8
Seo, Jun Hyuk Gyeonggi-do, KR 27 90

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