Method for manufacturing semiconductor device with impurity doped oxide semiconductor layer

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261119
APP PUB NO 20240014137A1
SERIAL NO

18370916

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Abstract

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A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA JAPAN KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jintyou, Masami Tochigi, JP 194 2572
Koezuka, Junichi Tochigi, JP 382 6294
Kurosaki, Daisuke Tochigi, JP 96 1623
Obonai, Toshimitsu Tochigi, JP 48 293

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