Control device and control method for single-wafer processing epitaxial growth apparatus, and epitaxial wafer production system

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United States of America

PATENT NO 12261065
APP PUB NO 20220406599A1
SERIAL NO

17807705

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Abstract

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A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epitaxial growth apparatus that needs new control. The calculation unit generates and outputs information for controlling at least one of the supply time of a source gas and the flow rate of a dopant gas in the epitaxial growth apparatus based on the measurement values for the epitaxial film formed by the epitaxial growth apparatus that needs new control and the measurement values of the epitaxial films formed by the other epitaxial growth apparatuses in the same production line that are in operation concurrently with the epitaxial growth apparatus.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1058634 ?1058634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wada, Naoyuki Tokyo, JP 67 1367

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