Method of manufacturing semiconductor device, and etching gas

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261050
APP PUB NO 20230307244A1
SERIAL NO

18325640

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Abstract

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In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO 1080023 ?1080023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishino, Takaya Yokkaichi, JP 6 3
Sasaki, Toshiyuki Yokkaichi, JP 131 776
Shimizu, Hisashi Shibukawa, JP 65 856
Shimoda, Mitsuharu Shibukawa, JP 4 2

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