Multi-layer hardmask for defect reduction in EUV patterning

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12261044
APP PUB NO 20230343593A1
SERIAL NO

17759896

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Abstract

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Various embodiments herein relate to methods, apparatus, and systems that utilize a multi-layer hardmask in the context of patterning a semiconductor substrate using extreme ultraviolet photoresist. The multi-layer hardmask includes (1) an upper layer that includes a metal-containing material such as a metal oxide, a metal nitride, or a metal oxynitride, and (2) a lower layer that includes an inorganic dielectric silicon-containing material. Together, these layers of the multi-layer hardmask provide excellent etch selectivity and reduce formation of defects such as microbridges and line breaks. Certain embodiments relate to deposition of the multi-layer hardmask. Other embodiments relate to etching of the multi-layer hardmask. Some embodiments involve both deposition and etching of the multi-layer hardmask.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Church, Jennifer Armonk, US 17 26
De, Silva Ekimini Anuja Slingerlands, US 1 3
Felix, Nelson Slingerlands, US 55 80
Friddle, Phillip Clifton Park, US 2 3
Metzler, Dominik Saratoga Springs, US 27 481
Nagabhirava, Bhaskar Tigard, US 9 44

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