Forming low-stress silicon nitride layer through hydrogen treatment

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United States of America

PATENT NO 12261036
APP PUB NO 20230386826A1
SERIAL NO

18358508

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A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsieh, Wei-Che New Taipei, TW 26 33
Huang, Ching Yu Hsinchu, TW 15 125
Lee, Tze-Liang Hsinchu, TW 403 4505
Wang, Chunyao Zhubei, TW 46 64
Yeh, Hsin-Hao Taipei, TW 12 14

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