Memory circuit structure and method of operating memory circuit structure

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12260911
APP PUB NO 20230368838A1
SERIAL NO

18247213

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Abstract

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The memory circuit structure includes: a storage array, wherein the storage array includes at least two storage units; a decoder connected with a bit line and a word line of the storage array respectively; a programming circuit configured to generate a voltage pulse or a constant current pulse; a polarity switching circuit connected with the programming circuit, and configured to implement a switching between a voltage programming and a current programming of the programming circuit under a set operation and a reset operation; a detection circuit connected with the storage array, and configured to detect a detection signal of a current or a voltage corresponding to the specific storage unit in the storage array and feed back the detection signal to a control unit, wherein the detection signal output by the detection circuit is configured to enable the polarity switching circuit to switch; and the control unit.

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Patent Owner(s)

  • INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dong, Danian Beijing, CN 4 0
Lv, Hangbing Beijing, CN 40 66
Xu, Xiaoxin Beijing, CN 23 49
Yu, Jie Beijing, CN 218 4360
Yu, Zhaoan Beijing, CN 1 0

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