Package stress sensor
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United States of America
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Mar 25, 2025
Grant Date -
Feb 16, 2023
app pub date -
Aug 2, 2022
filing date -
Aug 2, 2022
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Abstract
A semiconductor-based stress sensor can include a bipolar transistor device with first and second collector terminals. An excitation circuit can provide an excitation signal to an emitter terminal of the bipolar transistor device, and a physical stress indicator for the semiconductor can be provided based on a relationship between signals measured at the collector terminals in response to the excitation signal. The signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress. In an example, the physical stress indicator is based on a current deflection characteristic of a base region of the transistor device.
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