Bonding process for forming semiconductor device structure

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United States of America

PATENT NO 12258265
APP PUB NO 20230365402A1
SERIAL NO

18354012

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chih-Hang Taoyuan, TW 14 24
Liu, Jen-Hao Zhunan Township, TW 39 151
Wang, I-Shi Sanxia Township, TW 32 85

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