Semiconductor device having microelectromechanical systems devices with improved cavity pressure uniformity

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United States of America

PATENT NO 12257602
APP PUB NO 20220362804A1
SERIAL NO

17872686

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Abstract

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Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsiang-Fu Zhubei, TW 51 376
Chiu, I-Hsuan Taipei, TW 12 12
Hung, Chia-Ming Taipei, TW 44 376
Peng, Li-Chun Hsin-Chu, TW 10 60

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