Memory device and method of fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12256646
APP PUB NO 20230389439A1
SERIAL NO

17827998

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Abstract

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A memory device includes a substrate, a spin-orbit torque (SOT) layer, a magnetic tunneling junction (MTJ) film stack, a connecting via and a shielding structure. The SOT layer is disposed on the substrate. The MTJ film stack is formed over SOT layer and on the substrate. The connecting via is disposed on and electrically connected to the MTJ film stack. The shielding structure is laterally surrounding the MTJ film stack and disposed on the SOT layer, wherein the shielding structure includes a first dielectric layer, a high magnetic permeability layer and a second dielectric layer, the first dielectric layer is in contact with the SOT layer and the MTJ film stack, and the high magnetic permeability layer is sandwiched between the first dielectric layer and the second dielectric layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Yen-Lin Menlo Park, US 35 345
Lee, Chien-Min Hsinchu County, TW 210 1319
Lin, Shy-Jay Hsinchu County, TW 142 982
Song, Ming-Yuan Hsinchu, TW 17 19
Xu, Nuo San Jose, US 60 88

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