Field effect transistor including gate insulating layer formed of two-dimensional material
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United States of America
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Mar 18, 2025
Grant Date -
Jun 22, 2023
app pub date -
Feb 20, 2023
filing date -
Feb 20, 2023
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Abstract
Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.
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