Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12255233
APP PUB NO 20220246723A1
SERIAL NO

17579474

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Abstract

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A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.

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Patent Owner(s)

  • STMICROELECTRONICS S.R.L.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Frazzetto, Alessia Maria Sant'Agata Li Battiati, IT 3 1
Guarnera, Alfio Trecastagni, IT 30 44
Saggio, Mario Giuseppe Aci Bonaccorsi, IT 82 188
Zanetti, Edoardo Valverde, IT 21 28

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