Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
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United States of America
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Mar 18, 2025
Grant Date -
Sep 22, 2022
app pub date -
Feb 23, 2022
filing date -
Feb 23, 2022
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Abstract
A silicon carbide semiconductor device includes, on a front surface of a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a first semiconductor region of the first conductivity type selectively provided on a first side of the third semiconductor layer opposite to a second side thereof facing the silicon carbide semiconductor substrate, second semiconductor regions of the second conductivity type that have an impurity concentration higher than that of the second semiconductor layer, trenches, gate electrodes provided via gate insulating films, an interlayer insulating film, a first electrode, and a second electrode. The first semiconductor region is thinner than a portion of the third semiconductor layer between the first semiconductor region and the second semiconductor layer.
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