Method for depositing layers directly adjacent uncovered vias or contact holes
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United States of America
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Mar 18, 2025
Grant Date -
Nov 23, 2023
app pub date -
May 23, 2022
filing date -
May 23, 2022
priority date (Note) -
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Abstract
Disclosed are approaches for forming semiconductor device layers. One method may include forming a plurality of openings in a semiconductor structure, and forming a film layer atop the semiconductor structure by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure. The film layer may be formed along the upper surface of the semiconductor structure without being formed along a sidewall of each opening of the plurality of openings, wherein an opening though the film layer remains above each opening of the plurality of openings.
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