Semiconductor devices including a support pattern on a lower electrode structure
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United States of America
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Mar 18, 2025
Grant Date -
Apr 11, 2024
app pub date -
Dec 5, 2023
filing date -
Dec 5, 2023
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device includes: forming electrode holes by etching a mold structure including a mold layer and a support layer which are stacked on a substrate; forming lower electrode pillars filling the electrode holes; etching a portion of the support layer between the lower electrode pillars to form a support pattern having a through-hole exposing a portion of a top surface of the mold layer; removing the mold layer through the through-hole to expose sidewalls of the lower electrode pillars; and selectively forming lower electrode patterns on the sidewalls and top surfaces of the lower electrode pillars.
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