Ion implantation method and ion implanter

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12255046
APP PUB NO 20240047176A1
SERIAL NO

18488854

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO LTD1-1 OSAKI 2-CHOME SHINAGAWA-KU TOKYO 1416025 ?1416025

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawasaki, Yoji Ehime, JP 13 180
Sasaki, Haruka Ehime, JP 14 49

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Sep 18, 2028
7.5 Year Payment $3600.00 $1800.00 $900.00 Sep 18, 2032
11.5 Year Payment $7400.00 $3700.00 $1850.00 Sep 18, 2036
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00